USI Showcases Advanced SiC Chip-Embedded Packaging Technology at PCIM Europe 2026
USI Showcases Advanced SiC Chip-Embedded Packaging Technology at PCIM Europe 2026
Publish Date: 2026-05-26 19:00:00
Source Domain: www.prnewswire.com
~ Enabling Next-Generation Power Solutions ~
SHANGHAI, May 27, 2026 /PRNewswire/ — USI, a global leader in electronic design and manufacturing services, today announced a breakthrough in advanced power semiconductor packaging technology designed for next-generation power solutions. Leveraging its innovative substrate and module integration capabilities, USI has successfully embedded silicon carbide (SiC) dies into multilayer ABF substrates and adopted Single-Side Copper Exposed (SSC) module packaging technology to integrate ceramic substrate insulation and wire-bondless architecture within industry-standard power packages.
USI Power Module – Chip Embedded SiC Substrate
The innovative design marks a significant advancement in internally insulated power discrete devices by enabling the package itself to deliver built-in electrical insulation while simultaneously achieving low stray inductance and minimal conduction resistance. Designed to address the growing industry demand for higher efficiency, superior thermal performance, and greater power density, USI’s chip-embedded module packaging technology dramatically reduces conduction loss, lowers heat generation, and improves long-term operational reliability compared with conventional packaging approaches. By integrating a ceramic substrate, the package body provides reliable electrical insulation without the need for additional isolation structures. Meanwhile, the wire-bondless architecture enables larger chip integration within a slim package footprint, further enhancing power density and…
